ds30331 rev. 4 - 2 1 of 3 ddtc (r1-only series) ca www.diodes.com diodes incorporated ddtc (r1-only series) ca npn pre-biased small signal sot-23 surface mount transistor epitaxial planar die construction complementary pnp types available (ddta) built-in biasing resistor, r1 only available in lead free/rohs compliant version (note 2) features maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c h g d k c b e mechanical data case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 4, on page 2 marking: date code and marking code (see table below & page 2) ordering information (see page 2) weight: 0.008 grams (approximate) t c u d o r p w e n b r 1 schematic diagram e c p/n r1 (nom) marking ddtc113tca ddtc123tca ddtc143tca ddtc114tca ddtc124tca ddtc144tca ddtc115tca ddtc125tca 1k 2.2k 4.7k 10k 22k 47k 100k 200k n01 n03 n07 n12 n16 n19 n23 n25 characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c (max) 100 ma power dissipation p d 200 mw thermal resistance, junction to ambient air (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead.
ds30331 rev. 4 - 2 2 of 3 ddtc (r1-only series) ca www.diodes.com characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 50 v i c = 1ma emitter-base breakdown voltage bv ebo 5 v i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current i ebo 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c/ i b = 10ma/1ma ddtc113tca i c/ i b = 5ma/0.5ma ddtc123tca i c/ i b = 2.5ma/.25ma ddtc143tca i c/ i b = 1ma/.1ma ddtc114tca i c/ i b = 5ma/0.5ma ddtc124tca i c/ i b = 2.5ma/.25ma ddtc144tca i c/ i b = 1ma/0.1ma ddtc115tca i c/ i b = .5ma/.05ma ddtc125tca dc current transfer ratio h fe 100 250 600 i c = 1ma, v ce = 5v input resistor (r 1 ) tolerance r 1 -30 +30 % gain-bandwidth product* f t 250 mhz v ce = 10v, i e = -5ma, f = 100mhz electrical characteristics @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only xxx ym marking information notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free/rohs compliant version part numbers, please add "-f" suffix to the part numbers above. examp le: ddtc125tca-7-f. ordering information (note 3) device packaging shipping ddtc113tca-7 sot-23 3000/tape & reel ddtc123tca-7 sot-23 3000/tape & reel ddtc143tca-7 sot-23 3000/tape & reel ddtc114tca-7 sot-23 3000/tape & reel ddtc124tca-7 sot-23 3000/tape & reel ddtc144tca-7 sot-23 3000/tape & reel ddtc115tca-7 sot-23 3000/tape & reel ddtc125tca-7 sot-23 3000/tape & reel month jan feb march apr may jun jul aug sep oct nov dec code 12345 67 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key xxx = product type marking code, see table on page 1 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september
ds30331 rev. 4 - 2 3 of 3 ddtc (r1-only series) ca www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01 2 3 4 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 75c 25c 0.001 0 1 2 3 4 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 i=0ma e 10 1000 100 1 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (milliwatts) d typical curves - ddtc114tca
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